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ARCHIVE INFORMATION
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RF Device Data
Freescale Semiconductor
MRF5S19130HR3 MRF5S19130HSR3
Figure 2. MRF5S19130HR3(SR3) Test Circuit Component Layout
MRF5S19130
Rev 5
CUT OUT AREA
VGG
VDD
C24
C20
C21
C19
C18
C15
C22
C23
C17
C16
C25
C31
C32
C29
C30
C33
C34
C28
C27
C26
C14
C12
C11
C6
C7
C10
B2 R4
C13
C1
C2
C3
C4
C5
C9
R2
R1
B1
R3 C8
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signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
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相关代理商/技术参数
MRF5S19130R3
制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S19130SR3
制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S19150
制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors
MRF5S19150H
制造商:Freescale Semiconductor 功能描述:L BAND, SI, N-CHANNEL, RF POWER, MOSFET
MRF5S19150HR3
功能描述:射频MOSFET电源晶体管 HV5 32W N/CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S19150HR3_08
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF5S19150HR5
功能描述:射频MOSFET电源晶体管 HV5 32W N/CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S19150HSR3
功能描述:MOSFET RF N-CHAN 28V 32W NI-880S RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR